Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

Braun W; Jenichen B; Kaganer VM; Shtukenberg AS; Daweritz L; Ploog KH

Journal of Crystal Growth, Vol.251, No.1-4, 56-61, 2003

DOI10.1016/S0022-0248(02)02312-6 Export Citation

Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

Braun W, Jenichen B, Kaganer VM, Shtukenberg AS, Daweritz L, Ploog KH

Using a newly built dedicated synchrotron X-ray diffraction beamline, we investigate the growth and recovery kinetics during MBE of GaAs (0 0 1). The coarsening of two-dimensional islands and pits are analyzed quantitatively and independently of the surface reconstruction. Growth oscillations fits are joined to fits of the subsequent recovery. We identify the fast recovery process as the annihilation of islands and pits. The slow recovery process is due to the coarsening of the remaining islands or pits. (C) 2002 Elsevier Science B.V. All rights reserved.

Keywords:X-ray diffraction;surface processes;molecular beam epitaxy;gallium compounds;semiconducting III-V materials