InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy to quantity the influence of various growth parameters on the optical properties and on the In incorporation, Decreasing the group III flux results in improved room temperature photoluminescence intensity. Introduction of 5 and 10s interrupts at the MQW interfaces gives rise to loss of In. High temperature capping of MQW with GaN Mu produces blackening of the layers for an In content exceeding 12% due to formation of In platelets. (C) 2002 Elsevier Science B.V. All rights reserved.