With the aim of realizing laser diodes in the wavelength range beyond 1100 nm oil GaAs, we have Studied the indium incorporation behaviour into pseudomorphic InGaAs-quantum wells with extremely high indium content grown by metalorganic vapour phase epitaxy. A wide growth temperature range between 490 C and 770 C as well as the dependence on V/III-ratio and strain compensation has been studied. At the maximum In-content of 41%, a photoluminescence wavelength of 1238 nm at room temperature is obtained. Laser diodes with in emission wavelength up to 1206 nm were processed. Structures with a slightly reduced In-content. emitting, at 1120 nm, were processed to broad-area devices (100mum x 1000mum) and show output powers up to 12W, which corresponds to a record high internal power density of 23MW/cm(2), with a good reliability. LOC structures with a reduced far field below 30 and a higher indium content emit 8.5 W at 1170 nm. (C) 2002 Elsevier Science B.V. All rights reserved.