Self-assembled GaInAs quantum dots (QDs) embedded in GaIn(N)As were grown by atmospheric pressure metalorganic vapor phase epitaxy. The dependence of the photoluminescence (PL) properties on the material composition of the barrier layer was investigated. The emission wavelength and intensity of the QDs could be tuned by controlling the indium and nitrogen compositions in the barrier layer. By using a Ga0.8In0.2As barrier layer, the room-temperature PL wavelength of the QDs was extended up to 1.42 mum and the PL intensity was increased by a factor of three compared to the conventional GaInAs/GaAs QD structure. Preliminary results show that by using N-containing Ga0.85In0.15NAs as a barrier layer instead of Ga0.85In0.15As an increase in the PL wavelength and intensity in the 1.3 mum wavelength range can be obtained. (C) 2002 Elsevier Science B.V. All rights reserved.