GaAsSb InP superlattices (SLs) grown on InP using metalorganic vapor phase epitaxy Lire investigated by low temperature cathodoluminescence (CL) spectroscopy. transmission electron microscopy, and X-ray diffraction, The low-temperature CL spectra shock the spatially indirect type II transition across the GaAsSb InP interface, From type II luminescence. the conduction and valence band offsets between GaAsSb and InP are derived. The optical properties of GaAsSb, InAlAs SLs. which have type I band alignment, are compared with those of GaAsSb InP SLs. (C) 2002 Elsevier Science B.V. All rights reserved.