Metalorganic vapour phase epitaxy and the p-type doping of ZnSeTe layers on InP (1 0 0) using phosphorus acceptors are presented, The influences of molar ratio in the vapour phase and the ZnCdSe buffer are described. The dependence of the free hole concentration on the P incorporation into ZnSeTe and on the composition of the layers is revealed. The p-type conduction is verified by C-V profiling. Best crystalline quality is found for lattice-matched layers. while highest p-type conductivity is achieved with Te-rich layers. Free hole concentrations of 3 x 10(18). and I x 10(17) cm(-3) are obtained for strained and lattice matched ZnSeTe layers. respectively. (C) 2002 Elsevier Science B.V. All rights reserved.