The paper reviews the progress in the modeling of metalorganic vapor phase epitaxy (MOVPE) of carious III-V compounds. The recent studies focused on chemical gas-phase and surface phenomena have made possible the development of a global MOVPE model capable of predicting the growth rate and crystal composition within a ION accuracy for some commercial reactors. New approaches and perspective trends in MOVPE simulations are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.