This paper presents a systematic numerical investigation of the effects of particle formation on silicon film deposition from silane in a vertical rotating disk chemical vapor deposition reactor. The numerical model uses the Sandia SPIN code to simulate the reacting flow and heat transfer. A moment transport aerosol model simulates the nucleation, growth and transport of silicon particles. The effects of total reactor pressure, temperature, rotation rate, inlet gas composition, and rate of particle growth via condensation on the deposition rate of the silicon film are investigated. Results are presented detailing the scavenging of film growth precursor molecules by particles through a series of simulations both with and without an aerosol component. Conditions under which the particles affect the deposition rate have been identified. Additionally, the use of a chemically reactive carrier (H-2) is shown to effectively suppress the formation of particles in the gas phase. The effect of this particle suppression on the deposition rate is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.