Journal of Crystal Growth, Vol.242, No.1-2, 29-34, 2002
Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy
Optical properties of GaN0.018As0.982 quantum wells grown by either migration-enhanced epitaxy (MEE) or molecular beam epitaxy have been compared. MEE samples exhibit significantly enhanced photoluminescence (PL) intensity, reduced PL line width, and reduced PL low-energy tail, which could be correlated to better composition homogeneity. (C) 2002 Elsevier Science B.V. All rights reserved.