The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at I put resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9.2 x 10(16)/cm(3) and the Hall mobility is 3.54 x 10(4) cm(2)/V s at 300 K. The room temperature hand gap has been found to be in the range of 0.134-0.140eV. These results indicate that the grown films are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties. (C) 2002 Elsevier Science B.V. All rights reserved.