Journal of Crystal Growth, Vol.237, 2112-2115, 2002
Influence of pressure control on the growth of bulk GaN single crystal using a Na flux
We investigated the influence of N-2 pressure control on the growth of bulk GaN crystals by using a Na flux. GaN single crystals with a maximum dimension of 3 mm could be obtained by this method, though smaller crystals of 0.5-2 mm in size have been grown without pressure control. This Suggested significant effects of additional NH3 gas on growth of GaN crystals in the Na flux method. (C) 2002 Published by Elsevier Science B.V.
Keywords:single crystal growth;growth from melt;nitrides;semiconducting III-V materials;laser diodes;light emitting diodes