화학공학소재연구정보센터
Journal of Crystal Growth, Vol.237, 1831-1834, 2002
Drop experiments on crystallization of InGaSb semiconductor
Drop experiments have been performed to study the crystallization of InGaSb under different gravity conditions. Formation of spherical projections on the surface of InGaSb during its crystallization was in situ observed using a highspeed CCD camera. Spherical projections showed dependence on gravity during its growth. The projections formed under microgravity were almost spherical, whereas the projection formed under normal gravity was not perfectly spherical. Indium compositions in the spherical projections were found to vary with temperature. (C) 2002 Elsevier Science B.V. All rights reserved.