Journal of Crystal Growth, Vol.237, 1428-1433, 2002
Growth kinetics of GaP in LPE
Kinetic coefficient on a solid/liquid interface in liquid-phase epitaxial growth of GaP/GaP(I I I)B was measured by an in situ observation technique using a near-infrared microscopic interferometer under a static magnetic field of 4T. The morphological stability of the interface during the 'growth was quantitatively evaluated based on a linear perturbational approach taking account of the kinetic coefficient. The calculated value of the macrostep wavelength agreed well with the measured one. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords:convection;magnetic fields;morphological stability;liquid phase epitaxy;semiconducting III-V materials