We have Studied the liquid phase epitaxy growth or KTiOPO4 on several faces of KTi1-xGexOPO4 substrates as a function of the crystal face, growth time and level of substrate Ti in the substrate. The best quality films were oil the {100} and {201} faces. Only slight growth steps were observed oil these faces in some experiments. The lowest quality of the films was on the {110} and {011} faces and the typical defects were hillocks. The worst quality of epitaxial growth was oil the {101} face and pyramidal growth was detected in all cases. There was not observed diffusion of the Ge from the substrates to the film and the maximal change in refractive indices between substrate and film was of the order of 0.01. (C) 2002 Elsevier Science B.V. All rights reserved.