화학공학소재연구정보센터
Journal of Crystal Growth, Vol.237, 478-481, 2002
Preparation and characterization of Bi4Ti3O12-SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition
Ferroelectric thin films of Bi4Ti3O12 (BiT)(1-x)-SrBi4Ti4O15 (SBTi)(x) solid solutions have been prepared by pulsed laser deposition (PLD) to obtain a large remnant polarization (P-r) in bisumuth layer-structured ferroelectrics (BLSFs). The BiT-SBTi (x = 0.5) films prepared on Pt/Ti/SiO2/Si substrate it 600degreesC include both the crystalline structures of BiT and SBTi. Surface of the BiT-SBTi film was flat. the grain sizes are from 100 to 150 nm, and the average surface roughness of about 18 nm was much lower than those of BiT (40 nm) and SBTi (30 nm). Polarization at zero electric field was 9.3 muC/cm(2) which was clearly larger than those of BiT and SBTi films prepared at the same PLD conditions, and the coercive field vas 60 kV/cm. The dielectric constant at room temperature was about 250 for a measuring frequency of 1 MHz, which is larger than those of other BLSFs. (C) 2002 Elsevier Science B.V. All rights reserved.