Relative stability of Ga adatom on GaAs(1 0 0)-(2 x 4)beta2 and GaAs(n11)A (n = 2, 3 and 4) surfaces are investigated by empirical interatomic potential calculations. The calculated results suggest that Ga on (3 1 I)A is the most stable amongst all (n I I)A surfaces because the strain around the Ga adatom on (3 1 I)A is the smallest in the systems. Moreover, we studied the temperature dependence of Ga sticking coefficient on each surface using calculated Ga adsorption energy and chemical potential of atomic Ga in the vapor phase. The results imply that Ga sticking coefficient on (10 0)-(2 x 4)beta2 and (4 1 I)A decreases with increase of temperature T at T > 850 K, while it is almost unity on (2 1 1)A and (3 1 1)A around this temperature range. (C) 2002 Elsevier Science B.V. All rights reserved.