We grew diamond films on grooved silicon substrates, without conventional scratching method to enhance the diamond nucleation. The grooved silicon substrates were prepared by anisotropic etching technique using KOH solution. The films were grown by microwave plasma chemical vapor deposition method and the methane gas diluted with hydrogen was used as the source gas, The crystal quality of the film grown on silicon substrate was evaluated by the Raman and SEM experiments, and the results showed that relatively high quality and smooth diamond films were grown on the substrates and that the surface became flat and the crystal quality was improved with increasing growth time. (C) 2002 Elsevier Science B.V. All rights reserved.