Selective area growth of InP and GaAs On SiO2 patterned substrates aligned along [1 1 0] and [1 (1) over bar 0] directions was carried out by chemical beam epitaxy using a novel temperature control at various growth conditions such as growth temperature and group III pressure. The dependence of selective growth rate on stripe widths and pattern directions was examined. Diffused reflectance spectroscopy was used for the precise real-temperature control of the substrate in real time. For InP, no deposition of the polycrystalline InP on SiO2 masks occurred for all experimental conditions. The complete SAG of high-quality In-P (i.e., resulting in no formation of polycrystals on the SiO2 mask and good morphology) was achieved at a wide temperature range of about 485-505degreesC with 1.80 x 10(-6)-3.60 x 10(-6) Torr TMIn and 1.27 x 10(-4) Torr PH3. For GaAs, the selectivity was obtained at a low temperature of about 570degreesC with 2.31 x 10(-6) Torr TEGa and 7.28 x 10(-5) Torr AsH3. These results were improved compared with the results obtained by using conventional thermocouple temperature control. (C) 2002 Elsevier Science B.V. All rights reserved.