Cd0.80Zn0.20Te single crystal with dimensions of 20mm in diameter and 50mm in length was grown from Cd rich starting materials by a modified Bridgman method. The partial pressure of Cd was measured by using a simple method to determine the amount of excess Cd. The as-grown crystal was characterized by using X-ray diffraction, IR transmission microscopy, FTIR spectroscopy, etch pit density (EPD) measurement, and resistivity measurement. It was found that the transmission of the crystal sample of 5 mm in thickness was up to 50% in the range from 4400 to 450 cm(-1), and the resistivity and EPD was 2 x 10(10) Omega cm and 5 x 10(4) cm(-2), respectively. These results show that our method is a promising one for the growth of high resistivity single crystals.