Nanostructures of compound semiconductors of group-III nitrides are ideal building blocks for nanoscale optoelectronic devices. InN has a low decomposition temperature and the growth of nanoscale crystalline InN material at low temperatures is difficult. One of the approaches is to design single molecule precursors that decompose at low temperatures. Single molecule precursors of the type N3In[(CH2)(3)NMe2](2) were developed and the growth of dense crystalline InN layers with preferred orientation was achieved using this compound. However, employing specific CVD process parameters we were able to grow InN whiskers consistently by CVD using a cold wall CVD reactor on bare sapphire substrates at a growth temperature of 500 degreesC. These whiskers were characterised by XRD, SEM, EDX, XPS, RBS, TEM and SAED measurements.