A kinetics model for silicon carbide growth is proposed that is based on Hertz-Knudsen equation and relates supersaturation to the growth rate. The species concentration profiles in the growth chamber are obtained by using a one-dimensional advective mass transfer model assuming that the axial temperature gradient in growth chamber is larger than the radial temperature gradient. The RF induction heating and heat transfer in a 1.5-in system is calculated by using a magnetic vector potential theory and a coupled radiation and conduction model. Axisymmetric, two-dimensional growth rate profiles for different ingot lengths are obtained by considering the temperature variation in radial direction.