The strain-induced lateral-layer ordering process is used to fabricate GaInAs quantum wire (QWR) heterostructures on (100)-InP via molecular beam epitaxy. Using photoluminescence (PL) spectroscopy, the effect of the barrier material between QWR layers on the peak PL behavior with respect to temperature is investigated. In addition, two types of growth interrupt schemes were used to optimize the PL characteristics of the QWR heterostructure. Growth pauses during the deposition of the QWR layer were explored as a ell as growth pauses in between the QWR layer and barrier material. Consequently, peak PL wavelengths stabilized to less than 1 Angstrom/degreesC above room temperature have been obtained for GaInAs QWR heterostructures using nominally lattice-matched AlGaInAs barriers and QWR-barrier growth interrupts to improve PL intensity. It is shown that strain is the main factor behind this PL behavior with respect to temperature.