Growth of solid C-60 thin film on a hexagonal GaN (0 0 0 1) surface has been investigated. Epitaxial growth of the fee C-60 thin solid film has been achieved on a flat surface, while the polycrystalline C-60 film has only been obtained on a rough surface. The results indicate that the epitaxial growth of single crystalline C-60 layer on the h-GaN (0 0 0 1) surface is very sensitive to the surface morphology, because of very weak van der Waals interaction between the C-60 molecules and the chemically inactive h-GaN (0 0 0 1) surface.