Journal of Crystal Growth, Vol.227, 362-365, 2001
High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors
We have fabricated Al0.48In0.52As/In0.53Ga0.47As HEMTs using argon implant isolation with rapid thermal annealing that have device-to-device leakage current similar to that measured for mesa-isolated HEMTs. The argon implant-isolated Al0.48In0.52As/In0.53Ga0.47As HEMTs with gate length of 0.15 mum have measured f(t) and f(max) of 140 and 200 GHz, respectively. This performance is comparable to that of the mesa-isolated HEMTs.
Keywords:molecular beam epitaxy;semiconducting III-V materials;semiconducting ternary compounds;field effect transistors;heterojunction semiconductor devices;high electron mobility transistors