Resonant cavity light-emitting diodes grown by solid source MBE

Orsila S; Leinonen T; Uusimaa P; Saarinen M; Guina M; Sipila P; Vilokkinen V; Melanen P; Dumitrescu M; Pessa M

Journal of Crystal Growth, Vol.227, 346-351, 2001

DOI10.1016/S0022-0248(01)00719-9 Export Citation

Resonant cavity light-emitting diodes grown by solid source MBE

Orsila S, Leinonen T, Uusimaa P, Saarinen M, Guina M, Sipila P, Vilokkinen V, Melanen P, Dumitrescu M, Pessa M

We report solid source molecular beam epitaxy growth of visible, 650-nm range, resonant cavity light-emitting diodes. Devices operating at red wavelengths utilise an (AlxGa1-x)(y)In1-yP active region and AlxGa1-xAs distributed Bragg reflectors. Components with an emitting window of 84 mum exhibit a record high external quantum efficiency of 6.5% and output power of 2 mW.

Keywords:molecular beam epitaxy;quantum wells;semiconducting III-V materials;light emitting diodes