(A/As)(n)/(AlP)(n) (n = 1-5) short-period superlattices were grown by gas-source migration-enhanced epitaxy at a low growth temperature. High-qaulity short-period superlattices of AlAs/AlP were confirmed by X-ray diffraction, cross-sectional transmission electron microscopy analysis, and Raman spectroscopy. The satellite peaks related to the superlattice were clearly observed in the X-ray diffraction patterns and the average heterointerface roughness of the (AlAs)(2)/(AlP)(2) superlattice was estimated to be 0.42 Angstrom. Dynamical-theory simulations of X-ray diffraction patterns showed good agreement with the experimental patterns. Layer-by-layer growth with small interface roughness was confirmed by cross-sectional transmission electron microscopy analysis. In the Raman scattering spectra, confined modes of LO phonons of AIP. caused by strained AlAs/AlP superlattices, were observed.