For the first time, epitaxial growth by MBE/MEE (migration enhanced epitaxy) and the characterization of C-60 uniformly doped GaAs, C-60 delta -doped GaAs and C-60 delta -doped AlGaAs/GaAs superlattices are reported. Characterizations by TEM, SIMS, and other morphological or optoelectrical techniques show that the C-60-doping efficiency of MEE is much higher than that of MBE, and C-60 may introduce strong recombination centers. This possibly makes the materials good candidates for the application of fast response optical detector.