We simulate the surface shapes during homoepitaxial overgrowth of patterned GaAs substrates in the sector (0 0 1)(111)A. The model for the shape evolution is based on a diffusion equation in which the orientation-dependent parameters vary according to a simple model of the surface free energy of the zineblende crystal structure. Metastable pseudofacets its well as the initial shape of the step are demonstrated to play a major role in the evolution of the surface during overgrowth.