A system for growth of 50 cm diameter hollow cylindrical silicon crystals by the edge-defined film-fed growth (EFG) technique has been designed and constructed. Cylinders were grown with lengths up to 1.2m and wall thicknesses ranging from 75 to 300 mum. Growth speed limits, effects of stress and material chacteristics of the cylinders were investigated to evaluate the potential of large diameter EFG systems to provide increased productivity for silicon wafer manufacture.