Journal of Crystal Growth, Vol.225, No.2-4, 225-230, 2001
Improved phosphorus injection synthesis for bulk InP
High purity, stoichiometric InP is being produced in crucible-shaped, 3-kg charges by the phosphorus injection method in a high-pressure magnetic liquid encapsulated Czochralski (MLEC) crystal growth system. Dedicated heaters in the phosphorus injector assembly are used to heat and controllably inject the phosphorus vapor into the liquid encapsulated indium melt. Glow discharge mass spectroscopy and van der Pauw measurements of the polycrystalline charges and the Czochralski wafers confirmed the low background levels of impurities.
Keywords:Czochralski method;growth from melt;liquid encapsulated Czochralski method;phosphides;semiconducting III-V materials;semiconducting indium phosphide