Atomic layer epitaxy growth of ZnTe films is achieved using a novel isothermal closed-space sublimation system with elemental sources. X-rays, electron diffraction and optical measurements indicated the epitaxial quality of the films and confirmed a self-regulated atomic layer epitaxy regime. As the procedure is near equilibrium, the self-regulation mechanism is different from that occurring in other techniques like molecular beam epitaxy. In the present case, the difference in vapor pressures between the elemental source and the growing surface is the driving force for the growth; this difference being zero once the surface is completely covered.