화학공학소재연구정보센터
Journal of Crystal Growth, Vol.223, No.3, 357-362, 2001
A new approach to the crystal growth of Hg1-xMnxTe by the cold travelling heater method (CTHM)
In order to obtain crystals with a homogeneous composition and to reduce the Hg high pressure related to the temperature synthesis reaction between the components in elemental form, Hg1-chiMnchiTe bulk crystals were produced by the cold travelling heater method (CTHM). Following the technique initially proposed for the growth of CdHgTe by the Triboulet group, the feed material was a split ingot of two segments, one of HgTe and the other of MnTe, with cross-sectional areas chosen to establish the desired final composition. The growth was carried out at a temperature of 600 degreesC and a rate of 2mm/h. The Hg1-chiMnchiTe crystals have been characterised by scanning electron microscopy, including energy dispersive X-ray analysis and backscattered mode, powder X-ray diffractometry, Fourier transformed infrared spectroscopy, and SQUID magnetic susceptibility measurements. The crystals, with standard magnetic properties, show an excellent axial and radial composition uniformity throughout most of the total ingot length.