Journal of Crystal Growth, Vol.223, No.1-2, 116-124, 2001
The effect of oxygen on the temperature fluctuation of Marangoni convection in a molten silicon bridge
Temperature fluctuations in a half-zone liquid bridge of molten silicon were measured under precisely controlled oxygen partial pressure in the ambient atmosphere. A transition from a mode with non-periodic fluctuations in temperature to one with periodic fluctuations occurred when the oxygen partial pressure at the inlet was increased from 3.5 x 10(-7) to 1.8 x 10(-5) MPa. The transition indicates that the absolute temperature coefficient of surface tension decreases with increasing oxygen partial pressure at the silicon surface.
Keywords:fluid flows;semiconducting silicon