Single crystals of gallium nitride were grown in supercritical ammonia at 400 degreesC and 2.4 kbar. Solubilization of the GaN feedstock was accomplished through the use of a mineralizer which is a mixture of KNH2 and KI. Two different crystal morophologies were obtained; rods and hexagonal plates. In both cases, plate growth occurs mainly perpendicular to the hexagonal axis. Although the largest crystals (0.5 x 0.2 x 0.1 mm(3)) isolated thus far are smaller than those obtained by high nitrogen pressure methods, supercritical ammonia holds the potential to be the low-temperature rival of the current methods.