We report on the growth and the fabrication of InP-based microcavity light-emitting diodes (MCLEDs) operating at 1300 nm wavelength. Thus far, the MCLED concept was mainly used in the GaAs material system. Due to the reduced refractive index contrast available in the InP material system, a transfer to longer wavelengths is certainly not straightforward. The transition from the ternary AlGaAs to the quaternary InGaAsP system poses an additional growth-technical challenge. First, results of our 1300nm MCLEDs indicate excellent output power and high fiber-coupling efficiency.