Highly luminescent GaAs1-xNx alloys were successfully grown by atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition I of as high as 5.6% was obtained using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy) precursors. In-situ and post-growth rapid thermal annealing was performed to enhance the optical quality of the material. Intense low temperature photoluminescence was obtained from GaAsN down to 0.9 eV (1.38 mum).