Journal of Crystal Growth, Vol.220, No.3, 191-196, 2000
Initial stages of InN thin film growth onto MgAl2O4(111) and alpha-Al2O3(00 center dot 1) substrates
The initial growth stage of InN on both alpha -Al2O4(0 0 . 1) and MgAl2O3(1 1 1) substrates has been investigated. Both the reflection high-energy electron diffraction (RHEED) and the atomic force microscope (AFM) measurements indicated that the growth of InN on alpha -Al2O3(0 0 . 1) was three-dimensional, but was two-dimensional on MgAl2O4(1 1 1).