Three different Czochralski (CZ) techniques, referred to as normal, cusp magnetic field (CMF) and electromagnetic field (EMF) methods, were used to grow CZ-Si crystals, respectively. The behavior of defects in these gown CZ-Si crystals was systematically investigated by a new defect detection method of multi-chroic infrared light scattering tomography. Research results showed that the defect density and its distribution in three types of CZ-Si crystal were obviously different due to the different physical conditions, such as molten silicon flow in the crucible and temperature fluctuation in the melt during the crystal growth. Since lower defect density was experimentally observed in the CZ-SI crystals grown under an inside CMF configuration and electromagnetic field, both are considered as useful techniques to grow CZ-Si crystal with these features.