A thin-film bilayer structure consisting of polycrystalline Pb(Zr0.5Ti0.5)O-3 (PZT) and preferentially (111)-orientated Bi2Ti2O7 were prepared using the chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The effects of various annealing temperatures and times upon crystallization were investigated. The C-V and dielectric characteristics were measured. The PZT films annealed at 750 degrees C for 10 min consist of a single perovskite phase. The value of leakage current density at 9 V is 3.79 x 10(-7) A/cm(2). The counterclockwise hysteresis curve observed shows that it is polarization-type switching. The PZT/Bi2Ti2O7 film in the ON and OFF states is relatively stable.