The electron drift mobility of undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman method is measured by time-of-flight technique. Room temperature mobility of 950 cm(2)/Vs is measured, while it increases to 3000 cm(2)/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical mobility obtained by iterative solution of the Boltzmann equation.