The growth rate of Cl-doped ZnSe using a molecular beam epitaxy is studied. It is found that the growth rate drops drastically as the increase of ZnCl2 beam flux, and Cl-terminated ZnSe(100) is stable at growth temperature of 250 degrees C and Zn atoms cannot bond to this surface. Furthermore, it is confirmed that nondoped ZnSe can grow on Cl-terminated surface with the same growth rate of nondoped ZnSe on GaAs (100) and ZnCl2, beam irradiation has no etching effect of ZnSe. Then the growth reduction occurs under the coexistence of Zn, Se and ZnCl2 on the growing surface.