We have optimized the structure of ZnSe/ZnTe superlattice electrode by comparison between experimental characteristics and theoretical calculations. Quantum levels in ZnSe/ZnTe superlattice and tunneling carrier densities are evaluated by using finite element method and transfer matrix method, respectively. It is found that important parameters for the design of the superlattice electrode are (a) high ground quantum level of hole, and (b) large tunneling carrier density. A new optimum structure with very high tunneling current density is proposed.