The apparatus of the modulated Hall effect using laser-chopping technique was set up to measure the minority carrier mobility of p-type HgCdTe grown by Rotating technique. The measurements for the Fourier transform infrared (FTIR) spectroscopy and the Hall effect of p-type HgCdTe was carried out. One of the as-grown NgCdTe samples was converted into n-type through Hg annealing to see if the value of the minority carrier mobility measured by the modulated Hall effect is the same with the majority carrier mobility of the n-type HgCdTe. This converted sample was characterized by FTIR and Hall effect measurement. The modulated Hall effect was measured by changing the magnetic field of 0-0.45 T over the temperature range from 77 to 150 K.