화학공학소재연구정보센터
Journal of Crystal Growth, Vol.214, 250-254, 2000
Photoluminescence of various Zn1-xCdxTe/ZnTe heterostructures grown by MBE on GaAs(001) and ZnTe(001) substrates: temperature dependences
We present the results of studies of photoluminescence (PL) spectra in the temperature range 5-150 K for CdTe/ZnTe quantum dots (QDs) and ZnCdTe/ZnTe quantum wells (QWs) grown by MBE. The data for the QD systems have been obtained concerning the exciton-phonon interaction, the extent of lateral localization, the exciton binding energies and finally the influence of these factors on the PL line widths. We also have studied the influence of the exciton level energy depth on the temperature dependences of integral PL in QD and QW structures.