AlxGa1 - xSb crystals were grown by vertical Bridgman method with (111)B oriented GaSb seeds in a two-zone vertical gradient furnace. The growth was conducted using a two-step growth process, which consists of the growth under a constant temperature period and the growth in a vertical gradient freeze mode. During the period of the constant-temperature profile, the growth was realized by the transport of Al to the solid-liquid interface. AlxGa1 - xSb single crystals with a diameter of 14.5 min and a length of more than 27 mm were successfully obtained in pyrolitic boron nitride (PBN) crucibles. The longitudinal cross sections were investigated by using a Nomarski differential interference contrast microscope (N-DICM) and it was found that strong striations were induced due to the convection on the ground. The AlSb distribution was measured by spatially resolved photoluminescence (SRPL) and it was found that AlSb composition reached 10.4%.