화학공학소재연구정보센터
Journal of Crystal Growth, Vol.212, No.1-2, 128-137, 2000
Monte Carlo growth simulation for AlxGa1-xAs heteroepitaxy
A kinetic Monte Carlo model describing the growth of AlxGa1-xAs heterostructures is presented. It is successfully applied to vicinal surfaces, quantum wells and V-grooved substrates by taking into account the real cation lattice and the differences between Al and Ga atoms. The effective parameters are determined by comparing with RHEED intensity oscillations on vicinal surfaces. The differences between the normal and inverted interface of AlGaAs/GaAs quantum wells are explained by the lower diffusivity of Al compared with Ga adatoms. Simulating heteroepitaxy on V-grooved substrates, the formation of self-organized crescent-shaped quantum wires and a vertical quantum well are found, in agreement with experiment. This can be traced to the dependence of cation mobility on species and surface orientation.