Journal of Crystal Growth, Vol.210, No.1-3, 356-360, 2000
Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuits
IR probe technique is applied to recognize and study some technological and constructive defects producing excess photo-response in the IR-sensitive (InAs CID line array or FPA)-(Si multiplexer) hybrid microcircuits. The ways to reduce extra signal intensity are discussed.