Photocapacitance (PHCAP) and deep-level photoluminescence (PL) measurements were applied to the liquid phase epitaxially grown n-Al0.3Ga0.7As doped with Te. The PHCAP measurements revealed deep levels at E-c - 0.5 eV, E-c - 1.1 eV, and E-v + 1.5 eV. After 1.5 eV monochromatic light preirradiation, the signal intensity with respect to the E-c - 0.5 eV level was increased. Deep-level PL bands at 1.21 and 1.36 eV were also detected. The optical transition mechanism of the Te-related DX center is proposed based on these experimental results.