Zinc oxide (ZnO) thin films were deposited from ammonium zincate bath following a chemical dipping technique. Films in the thickness range 0.25-4.0 mu m could be prepared by varying the ammonium zincate bath concentration (in the range 0.03-1.5 M) and number of dipping (0-200). Higher values of bath concentration produced nonadherent and poor quality films. The film growth rate was found to be a sensitive function of bath pH. The critical range of pH value for adherent and good quality films was found to be 11.0-11.1. Structural characterization by scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate the formation of polycrystalline ZnO with strong c-axis orientation. The films were found to be highly resistive with dark resistivity of the order of 10(5) Omega cm. The electrical conductance was studied in the temperature range 300-650 K. The characteristic effect of chemisorption was found to influence the electrical properties of the films. (c) 2005 Elsevier B.V. All rights reserved.