An improved performance of organic light-emitting diodes has been obtained by using 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4 Hpyran (DCJTB) as an ultrathin emitting layer. When 0.1 nm DCJTB was inserted between the hole-transporting layer and electron-transporting layer, for an unoptimized device indium-tin oxide (ITO)/naphtylphenyliphenyl diamine (NPB)/DCJTB (0.1 nm)/8-hydroxyquinoline aluminum (Alq(3))/Al, the maximum brightness was 1531 cd m(-2) at 15 V. Compared with doped devices ITO/NPB/Alq(3):DCJTB (1%)/Alq(3)/LiF/Al, a higher efficiency has been achieved. Compared with the conventional device ITO/NPB/Alq(3)/Al, the inserted device has a slightly higher current efficiency and lower turn-on voltage. We suggest the ultrathin DCJTB layer acts as trap for carriers, and the accumulated holes at the hole-transport layer/electron-transport layer interface have enhanced the electric field in the electron-transport layer and improved the electron injection at the cathode. © 2005 Elsevier B.V. All rights reserved.